IN-SITU PHOSPHORUS HEAVY DOPING ON $Si_{1-x}Ge_x$ EPITAXIAL GROWTH WITH HIGH Ge FRACTION BY USING LPCVD

  • Lee, C.J. (Dept. of Elect. Eng., Kunsan National Univ.) ;
  • Matsuura, T. (Lab. for Electronic Intelligent Systems, RIEC, Tohoku Univ.) ;
  • Murota, J. (Lab. for Electronic Intelligent Systems, RIEC, Tohoku Univ.)
  • Published : 1998.08.01