한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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- Pages.155-158
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- 1998
MIS 구조의 DLPC LB 막의 제작과 전압-전류 특성
Fabrication of DLPC LB films with MIS structure and I-V characteristics
초록
MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the sillicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-
키워드