Anomalous Phenomena on Subthreshold Characteristics of SOI MOSFET Back Gate Voltage

The 1-D numerical model and its extraction methodology are suggested and these simulation results for the S-swing as a function of back-gate voltage are well matched with the measured. S-swing characteristics are analyzed using PD-SOI devices with enough deeper regions up to substrates. The PD-SOI device doesn't have to be short channel to see the anomalous subthreshold phenomena based on the back gate bias. This results recommend to operate better SOI device performances by controlling the back gate voltages. So SOI performances will be much optimistic with proper control of the back-gate voltage for the already- proven- high- performance (APHP) SOI VLSIs.