A Study on the Current Kink Effect in NMOSFET SOI Device with the Varying Gate Oxide Thickness

NMOSFET SOI 소자에서 부분적 게이트 산화막 두께 변화에 의한 돌연 전류 효과 고찰

Thin film SOI(Silicon-On-Insulator) devices exhibit floating body effect. In this paper, SOI NMOSFET is proposed to solve this problem. Some part of gate oxide was considered to be 30nm~80nm thicker than the other normal gate oxide and simulated with TSUPREM-4. The I-V characteristics were simulated with 2D MEDICI mesh. Since part of gate oxide has different oxide thickness in proposed device, the gate electric field strength is not the same throught the gate and consequently the reduction of current kink effect is occurred.