대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 하계학술대회 논문집 D
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- Pages.1462-1464
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- 1998
측면 기판 단자를 갖는 다결정 실리콘 박막 트랜지스터의 제작과 전기적 특성 분석
Fabrication and electrical characteristic analysis of poly-Si TFT with lateral body
- Choi, H.B. (School of electrical engineering of Seoul National University) ;
- Yoo, J.S. (School of electrical engineering of Seoul National University) ;
- Kim, C.H. (School of electrical engineering of Seoul National University) ;
- Han, M.K. (School of electrical engineering of Seoul National University)
- 발행 : 1998.07.20
초록
Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.
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