대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 하계학술대회 논문집 D
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- Pages.1291-1293
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- 1998
Misalign에 따른 MOSFET의 전기적 특성
The Electrical Characteristics of MOSFET due to Misalign
- 홍능표 (삼성전자(주) PD사업부) ;
- 김원철 (삼성전자(주) PD사업부) ;
- 임필규 (삼성전자(주) PD사업부) ;
- 이태훈 (광운대학교 전기공학과) ;
-
홍진웅
(광운대학교 전기공학과)
- Hong, Nung-Pyo (Samsung Electronics Co. PD Division) ;
- Kim, Won-Chul (Samsung Electronics Co. PD Division) ;
- Im, Pil-Gyu (Samsung Electronics Co. PD Division) ;
- Lee, Tae-Hoon (KwangWoon Univ. Electrical Eng.) ;
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Hong, Jin-Woong
(KwangWoon Univ. Electrical Eng.)
- 발행 : 1998.07.20
초록
Power MOSFETs are very important Devices in power circuit applications such as motor control, switch mode power supplies & telecommunicatioelectronics. In order to investigated the Avalanch Energy value of MOSFET due to Misalign. Some samples made under several different
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