Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1998.07f
- /
- Pages.1966-1968
- /
- 1998
A Study on Active Voltage Control of Series Connected IGBTs
IGBT소자 직렬연결 구동 연구
- Hong, S.W. (R & D Institute, Hyosung Industries Co., Ltd.) ;
- Yang, H.J. (R & D Institute, Hyosung Industries Co., Ltd.) ;
- Kim, J.M. (R & D Institute, Hyosung Industries Co., Ltd.) ;
- Lee, H.S. (R & D Institute, Hyosung Industries Co., Ltd.) ;
-
Chang, B.H.
(Korea Electric Power Research Institute, KEPRI)
;
- Oh, K.I. (Korea Electric Power Research Institute, KEPRI)
- 홍순욱 (효성 중공업(주) 기술 연구소) ;
- 양항준 (효성 중공업(주) 기술 연구소) ;
- 김준모 (효성 중공업(주) 기술 연구소) ;
- 이학성 (효성 중공업(주) 기술 연구소) ;
-
장병훈
(한국전력공사 한국전력연구원)
;
- 오관일 (한국전력공사 한국전력연구원)
- Published : 1998.07.20
Abstract
This paper describes a gate drive circuit for series connected IGBTs in high voltage applications. The proposed control criterion of the gate circuit is to actively limit the voltages during switching transients, while minimizing switching transient and losses. In order to achieve the control criterion, an analog closed loop control scheme is adopted. The performance of gate drive circuit is examined experimentally by the series connection of three IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by an active control under wide variation in loads and imbalance conditions.
Keywords