대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 하계학술대회 논문집 G
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- Pages.2501-2503
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- 1998
MEMS-IR SENSOR용 식각-접합-박막증착 기반공정
Etching-Bonding-Thin film deposition Process for MEMS-IR SENSOR Application
- 박윤권 (서울시립대학교 전자전기공학부) ;
-
주병권
(한국과학기술연구원 정보재료소자연구센터)
;
- 박흥우 (한국과학기술연구원 정보재료소자연구센터) ;
- 박정호 (고려대학교 전자공학과) ;
- 염상섭 (고려대학교 전자공학과) ;
- 서상희 (고려대학교 전자공학과) ;
- 오명환 (고려대학교 전자공학과) ;
- 김철주 (한국과학기술연구원 정보재료소자연구센터)
- Park, Yun-Kwon (Dept. of electronics Eng., The university of Seoul) ;
-
Joo, Byeong-Kwon
(Div. of Electronics and information Technology)
;
- Park, Heung-Woo (Div. of Electronics and information Technology) ;
- Park, Jung-Ho (Dept Electonics Eng. Korea university) ;
- Yom, S.S. (Dept Electonics Eng. Korea university) ;
- Suh, Sang-Hee (Dept Electonics Eng. Korea university) ;
- Oh, Myung-Hwan (Dept Electonics Eng. Korea university) ;
- Kim, Chul-Ju (Div. of Electronics and information Technology)
- 발행 : 1998.07.20
초록
In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.