Comparison of the Performance of Thin Film Pressure Sensors with Polyimid and Silicon Oxide as a Insulating Layer

절연층으로 폴리이미드와 실리콘 산화막을 사용한 박막 압력 센서의 특성 비교

The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.