Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The Structural and Electrical Properties of the BST Thin Film Prepared by Sol-Gel method.

Sol-Gel법으로 제조한 BST 박막의 구조 및 전기적 특성

  • 김경덕 (광운대학교 전자재료공학과) ;
  • 정장호 (광운대학교 전자재료공학과) ;
  • 배선기 (시립 인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1997.11.29
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

Keywords