대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

평판형 유도 결합 플라즈마틀 이용한 GaN 건식 식각 특성

GaN Dry Etching Characteristics using a planar Inductively coupled plasma

  • 김문영 (경북대학교 전기공학과) ;
  • 김태현 (경북대학교 전기공학과) ;
  • 장상훈 (경북대학교 전기공학과) ;
  • 태흥식 (경북대학교 전기공학과)
  • Kim, Moon-Young (Dep. of Electrical Eng. Kyungpook National University) ;
  • Kim, Tae-Hyun (Dep. of Electrical Eng. Kyungpook National University) ;
  • Jang, Sang-Hun (Dep. of Electrical Eng. Kyungpook National University) ;
  • Tae, Heung-Sik (Dep. of Electrical Eng. Kyungpook National University)
  • 발행 : 1997.11.29
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초록

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

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