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The Volume Resistivity properties due to the Curing Condition of Silicone Gel for Power Semiconductor

  • Song, Byung-Gi (Dept. of Electrical Engineering, Kwangwoon University) ;
  • Cho, Kyung-Soon (Dept. of Electrical Engineering, Kwangwoon University) ;
  • Shin, Jong-Yeol (Dept. of Electrical Engineering, Kwangwoon University) ;
  • Kim, Lee-Doo (Dept. of Electrical Engineering, Kwangwoon University) ;
  • Hong, Jin-Woong (Dept. of Electrical Engineering, Kwangwoon University)
  • 발행 : 1997.11.29

초록

In order to a study on the electrical properties of silicone gel due to the curing condition, the volume resistivity test is researched. For experiment, we have made up several samples of different curing temperature and time such as 1[H], 2[H] at 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$], 180[$^{\circ}C$]. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 500[V] and 1000[V] is applied. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 2[pF]. As a result of the experiment, the electrical properties of specimen cured at 170[$^{\circ}C$] for 2[H] is superior.

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