Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Physical Parameters of Amorphous Silicon using a Two-Dimensional Device Simulator(TFT2DS)

이차원 소자 시뮬레이터를 이용한 비정질 실리콘 물성 파라메타에 관한 연구

  • 곽지훈 (홍익대학교 전자전기공학부) ;
  • 최종선 (홍익대학교 전자전기공학부)
  • Published : 1997.04.01
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Abstract

TFT2DS was developed to provide the usefulness as an analytic and design tool. The static characteristics of a-Si:H TFTs demonstrated a good agreement between simulated and measured data. This paper shows that TFT2DS can optimize the physical parameters of a-Si:H through sensitivity simulations and compute the static characteristics of a-Si:H TFTs. Moreover, through the sensitivity study of the parameters, it is shown that the optimizations of both the physical parameters of a-Si:H and the parameters of a-Si:H deposition, which must be inter-related, might be possibl.

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