대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

선택적 레이저 어닐링을 이용하여 비정질 실리콘 오프셋을 갖는 Inverse Staggered 다결정 실리콘 박막 트랜지스터

Inverse Sta99ered Poly-Si TFT with a-Si Offset formed by Selective Excimer Laser Annealing

  • 박기찬 (서울대학교 공과대학 전기공학부) ;
  • 최권영 (서울대학교 공과대학 전기공학부) ;
  • 김천홍 (서울대학교 공과대학 전기공학부) ;
  • 한민구 (서울대학교 공과대학 전기공학부)
  • Park, Kee-Chan (School of Electrical Engineering, Seoul National University) ;
  • Choi, Kwon-Young (School of Electrical Engineering, Seoul National University) ;
  • Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
  • Han, Min-Koo (School of Electrical Engineering, Seoul National University)
  • 발행 : 1997.07.21
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초록

For AMLCD pixel switching device, poly-Si TFT has the advantage of high field effect mobility over a-Si TFT. However, it also has some disadvantage such as large leakage current and more masking steps. We propose a new Inverse Staggered poly-Si TFT with a-Si offset. We have fabricated the new device and verified high ON/OFF current ratio. The device has lower leakage current level than the conventional Inverse Staggered poly-Si TFT and the same number of masking steps compared with conventional a-Si TFT's.

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