Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1997.07d
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- Pages.1633-1635
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- 1997
Inverse Sta99ered Poly-Si TFT with a-Si Offset formed by Selective Excimer Laser Annealing
선택적 레이저 어닐링을 이용하여 비정질 실리콘 오프셋을 갖는 Inverse Staggered 다결정 실리콘 박막 트랜지스터
- Park, Kee-Chan (School of Electrical Engineering, Seoul National University) ;
- Choi, Kwon-Young (School of Electrical Engineering, Seoul National University) ;
- Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
- Han, Min-Koo (School of Electrical Engineering, Seoul National University)
- Published : 1997.07.21
Abstract
For AMLCD pixel switching device, poly-Si TFT has the advantage of high field effect mobility over a-Si TFT. However, it also has some disadvantage such as large leakage current and more masking steps. We propose a new Inverse Staggered poly-Si TFT with a-Si offset. We have fabricated the new device and verified high ON/OFF current ratio. The device has lower leakage current level than the conventional Inverse Staggered poly-Si TFT and the same number of masking steps compared with conventional a-Si TFT's.
Keywords