대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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- Pages.232-234
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- 1996
저전력 DRAM을 위한 온-칩 온도 감지 회로
CMOS On-Chip Temperature detector circuit For Low Power DRAM
- Kim, Young-Sik (Korea University) ;
- Lee, Jong-Seok (Korea University) ;
- Yang, Ji-Un (Hyundai Electronics) ;
- Lee, Hyun-Seok (Korea University) ;
- Sung, Man-Young (Korea University)
- 발행 : 1996.11.16
초록
The self-refresh mode was introduced as method to reduce power dissipation in DRAM. Because the data retention time of DRAM cell decreases as the ambient temperature rises, the internal period in self-refresh mode must be limited by retention capability at the highest temperature in DRAM specification. Because of this, at room temperature(
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