CMOS On-Chip Temperature detector circuit For Low Power DRAM

저전력 DRAM을 위한 온-칩 온도 감지 회로

The self-refresh mode was introduced as method to reduce power dissipation in DRAM. Because the data retention time of DRAM cell decreases as the ambient temperature rises, the internal period in self-refresh mode must be limited by retention capability at the highest temperature in DRAM specification. Because of this, at room temperature($25^{\circ}C$) unnecessary power dissipation happens, If the period of self-refresh could be modulated as temperature, it is possible to reduce the self-refresh current. In this paper, new temperature detector circuit is suggested as this purpose.