한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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AIGaAs/GaAs 이종접합 바이폴라 트랜지스터를 이용한 10Gbps 고속 전송 회로의 설계 및 제작에 관한 연구

Design and Fabrication of 10Gbps Optical Communication ICs Using AIGaAs/GaAs Heterojunction Bipolar Transistors

  • 이태우 (한국전자통신연구소, 화합물반도체연구부) ;
  • 박문평 (한국전자통신연구소, 화합물반도체연구부) ;
  • 김일호 (한국전자통신연구소, 화합물반도체연구부) ;
  • 박성호 (한국전자통신연구소, 화합물반도체연구부) ;
  • 편광의 (한국전자통신연구소, 화합물반도체연구부)
  • 발행 : 1996.11.01
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초록

Ultra-high-speed analog and digital ICs (integrated circuits) fur 10Gbit/sec optical communication systems have been designed, fabricated and analyzed in this research. These circuits, which are laser diode (LD) driver, pre-amplifier, automatic gain controlled (AGC) amplifier, limiting amplifier and decision circuit, have been implemented with AIGaAs/GaAs heterojunction bipolar transistors (HBTs). The optimized AIGaAs/GaAs HBTs for the 10Gbps circuits in this work showed the cutoff and maximum oscillation frequencies of 65㎓ and 53㎓, respectively. It is demonstrated in this paper that the 10Gbps optical communication system can be realized with the ICs designed and fabricated using AlGaAs/GaAs HBTs.

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