한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

AIGaAs/GaAs 이종접합 바이폴라 트랜지스터의 온도 변화에 따른 전기적 특성에 대한 연구

Temperature Dependence of Electrical Characteristics of AIGaAs/GaAs Heterojunction Bipolar Transistors

  • 박문평 (한국전자통신연구소, 화합물반도체연구부) ;
  • 이태우 (한국전자통신연구소, 화합물반도체연구부) ;
  • 김일호 (한국전자통신연구소, 화합물반도체연구부) ;
  • 박성호 (한국전자통신연구소, 화합물반도체연구부) ;
  • 편광의 (한국전자통신연구소, 화합물반도체연구부)
  • 발행 : 1996.11.01
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초록

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

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