Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.05a
- /
- Pages.102-104
- /
- 1996
Temperature Variation Capacitance Characteristics of Inverted Staggered TFT
인버티드 스태거형 TFT 캐패시턴스의 온도변화 특성
Abstract
The fabrication and analytical expression for the temperature dependent capacitance characteristics of inverted staggered hydrogenerated amorphous silicon thin film transistors(a-si :H TFT) from 303k to 363k were presented. The results show that the experimental capacitance-voltage characteristics at several temperatures are easily measured. Capacitance increased exponentially by gate voltage increase and decreased by temperature increase. C/C(max) ratio decreased at higher temperature, C/C(min) ratio increased at higher temperature.
Keywords