한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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- Pages.51-54
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- 1996
표면 채널 모스 소자에서 유효 이동도의 열화
The Degradations of Effective Mobility in Surface Channel MOS Devices
초록
This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(
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