Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Formation of Microporosities in Sputter-Deposited AgInSbTe Thin Films and Their Behavior

스퍼터 증착시킨 AgInSbTe 박막에서 미세기공의 형성과 그 거동

  • Kim, Myong-R. (Devices & Materials Lab.,LG Electronics Research Center) ;
  • Seo, H. (Devices & Materials Lab.,LG Electronics Research Center) ;
  • Park, J. W. (Devices & Materials Lab.,LG Electronics Research Center) ;
  • Choi, W. S. (Devices & Materials Lab.,LG Electronics Research Center)
  • 김명룡 (LG 전자기술원 소자재료연구부문) ;
  • 서훈 (LG 전자기술원 소자재료연구부문) ;
  • 박정우 (LG 전자기술원 소자재료연구부문) ;
  • 최우석 (LG 전자기술원 소자재료연구부문)
  • Published : 1996.05.01
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Abstract

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

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