Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication and Testing of a Polysilicon Piezoresistive Accelerometer using p+ Silicon Diaphragm

p+ 실리콘 박막을 이용한 폴리실리콘 압저항 가속도계의 제작 및 측정

  • Yang, E.H. (School of Electrical and Electronic Engineering, AJOU University) ;
  • Jeong, O.C. (School of Electrical and Electronic Engineering, AJOU University) ;
  • Yang, S.S. (School of Electrical and Electronic Engineering, AJOU University)
  • 양의혁 (아주대학교 전기전자공학부) ;
  • 정옥찬 (아주대학교 전기전자공학부) ;
  • 양상식 (아주대학교 전기전자공학부)
  • Published : 1996.07.22
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Abstract

This paper presents the fabrication and testing of a polysilicon piezoresistive accelerometer with p+ silicon diaphragm by simple process such as two step photolithography for the RIE process to form the cantilevers and a deep anisotropic etch process for the complete fabrication of the accelerometer. The fabricated accelerometer consists of a seismic mass and four cantilevers on which polysilicon piezoresistors are formed. The measurement of the output signal from the bridge circuit of the fabricated accelerometer is carried out with the HP 3582A spectrum analyzer. The analysis of the experimental result is showed in terms of the sensitivity and the resonant frequency. At atmospheric condition, the measurement values of the sensitivity and the resonant frequency are $11\;{\mu}V/Vg$ and 475 Hz, respectively.

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