대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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$Al_{0.3}Ga_{0.7}As/GaAs$ 다층구조의 레이저 직접 건식에칭

Laser Direct Ory Etching for $Al_{0.3}Ga_{0.7}As/GaAs$ Multi-layer Structures

  • 박세기 (인하대학교 전기공학과) ;
  • 이천 (인하대학교 전기공학과) ;
  • 김성일 (한국과학기술연구원 반도체재료연구센터) ;
  • 김은규 (한국과학기술연구원 반도체재료연구센터) ;
  • 민석기 (한국과학기술연구원 반도체재료연구센터)
  • Park, Se-Ki (Department of Electrical Engineering, Inha University) ;
  • Lee, Cheon (Department of Electrical Engineering, Inha University) ;
  • Kim, Seong-Il (Semiconductor Materials Research Center, KIST) ;
  • Kim, Eun-Kyu (Semiconductor Materials Research Center, KIST) ;
  • Min, Suk-Ki (Semiconductor Materials Research Center, KIST)
  • 발행 : 1996.07.22
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초록

Laser direct dry etching is a new technique in semiconductor processing which has a lot of advantage, including decrease of etching-induced damage, maskless, photoresistiess, and high selectivity. This study presents characteristics of a laser direct dry etching for $Al_{0.3}Ga_{0.7}As/GaAs$ multi-layer structures for the first time. In this study, we were able to obtain the unusual aching profiles. The cross sectional analysis of etched groove was peformed for reaction characteristics and their applications.

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