Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1980-1981
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- 1996
Laser Direct Ory Etching for $Al_{0.3}Ga_{0.7}As/GaAs$ Multi-layer Structures
$Al_{0.3}Ga_{0.7}As/GaAs$ 다층구조의 레이저 직접 건식에칭
- Park, Se-Ki (Department of Electrical Engineering, Inha University) ;
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Lee, Cheon
(Department of Electrical Engineering, Inha University) ;
- Kim, Seong-Il (Semiconductor Materials Research Center, KIST) ;
- Kim, Eun-Kyu (Semiconductor Materials Research Center, KIST) ;
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Min, Suk-Ki
(Semiconductor Materials Research Center, KIST)
- 박세기 (인하대학교 전기공학과) ;
-
이천
(인하대학교 전기공학과) ;
- 김성일 (한국과학기술연구원 반도체재료연구센터) ;
- 김은규 (한국과학기술연구원 반도체재료연구센터) ;
-
민석기
(한국과학기술연구원 반도체재료연구센터)
- Published : 1996.07.22
Abstract
Laser direct dry etching is a new technique in semiconductor processing which has a lot of advantage, including decrease of etching-induced damage, maskless, photoresistiess, and high selectivity. This study presents characteristics of a laser direct dry etching for
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