Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
- /
- Pages.1606-1608
- /
- 1996
A Study on the SOI RESURF LDMOS with a Taper Oxide on the Drain
경사진 드레인 산화막을 갖는 SOI RESURF LDMOS에 관한 연구
- Park, Il-Yong (School of Electrical Eng., Ajou Univ.) ;
- Kim, Sung-Lyong (School of Electrical Eng., Ajou Univ.) ;
- Choi, Yearn-Ik (School of Electrical Eng., Ajou Univ.) ;
-
Han, Min-Koo
(School of Electrical Eng., S.N.U.)
- Published : 1996.07.22
Abstract
An the SOI RESURF LDMOS with a taper oxide on the drain is proposed and verified by the device simulator, MEDICI. Simulation results on the proposed LDMOS exhibits the increase in the breakdown voltage by 12 % and reduction in the drift region length by 25 %.
Keywords