대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

반응성 R.F. 스퍼트링에 의한 AC PDP 용 MgO형성에 관한 연구

The study on MgO formation for AC PDP prepared by R.F. reactive magnetron Sputtering

  • Ha, H.J. (Pusan national university electrical engineering Dept.) ;
  • Lee, W.G. (Pusan national university electrical engineering Dept.) ;
  • Nam, S.O. (Pusan national university electrical engineering Dept.) ;
  • Ha, S.C. (Pusan national university electrical engineering Dept.) ;
  • Cho, J.S. (Pusan national university electrical engineering Dept.) ;
  • Park, C.H. (Pusan national university electrical engineering Dept.)
  • 발행 : 1996.07.22
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초록

MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

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