Electrical and Optical Switching Characteristics of Gold-Doped P-I-N Diodes

금이 도우핑된 P-I-N 다이오드의 전기적 및 광학적 스위칭 특성

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.