A study on Electromigration characteristics in Al line with Ti/TiN Barrier Layer

Ti/TiN Barrier 층을 갖는 Al 배선의 Electromigration 특성

  • Choo, K.S. (Department of Electrical Engineering. Korea University) ;
  • Shin, S.W. (Department of Electrical Engineering. Korea University) ;
  • Chu, Eu-Gine (Department of Electrical Engineering. Korea University) ;
  • Sung, Y.K. (Department of Electrical Engineering. Korea University)
  • 추교섭 (고려대학교 전기공학과) ;
  • 신상우 (고려대학교 전기공학과) ;
  • 주유진 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1995.11.18

Abstract

We investigated the Electromigration characteristics in Cu alloyed Al line and the effect of Ti/TiN barrier layer on the characteristics. Test structures were fabricated by wafer level and 50% failure times were tested in the condition of j= 2 MA/$cm^3$, T= 300$^{\circ}C$. The reliability of Al line was improved which was 0.5%Cu Alloyed, but Ti/TiN under layer deteriorated the reliability while TiN over layer improved the characteristics.

Keywords