Effect of Si,Ge Pre-impplant induced Defects on Electrical Properties of $P^+$-n Junctions during Rapid Thermal Annealing

  • Kim, K.I. (Electronic device & system research Lab. Research Institute of Industrial Science & Technology pp.O.Box 135, ppohang, 790-600) ;
  • Kwon, Y.K. (Electronic device & system research Lab. Research Institute of Industrial Science & Technology pp.O.Box 135, ppohang, 790-600) ;
  • Cho, W.J. (Advanced pprocess Tech. Deppt. LG Semicon) ;
  • H. Kuwano (Department of Electrical Engineering, Faculty of Science and Technology, Keto University)
  • Published : 1995.06.01