Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1995.06a
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- Pages.147-147
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- 1995
THE PROPERTIES OF NITROGEN IMPLANTED TUNGSTEN FILM AS Cu DIFFUSION BARRIER
- Kwon, Chul-Soon (Micro pprocess Developpment, Samsung Electronics, 82-3, Dodang-Dong, Wonmi-Ku, Buchun, Kyunggi-Do, 421-130) ;
- Kim, Dong-Joon (Semiconductor Materials Laboratory, Korea Institute of Science and Technology) ;
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Kim, Yong-Tae
(Semiconductor Materials Laboratory, Korea Institute of Science and Technology)
- Published : 1995.06.01
Abstract
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