Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
- /
- Pages.1239-1241
- /
- 1995
Effects of Hydrogen Passivation on Polycrystalline Silicon Thin Film Transistors
다결정 실리콘 박막 트랜지스터의 수소화 효과
-
Kim, Yong-Sang
(Department of Electrical Engineering, Myongji University)
-
김용상
(명지대학교 공과대학 전기공학과)
- Published : 1995.07.20
Abstract
The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about
Keywords