Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
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- Pages.1072-1074
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- 1995
A Study on the Breakdown Characteristics of High Voltage Device using Field Limiting Ring and Side Glass Insulator Wall
전계제한테와 측면 유리 절연층을 사용한 고내압 소자의 항복 특성 연구
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Huh, Chang-Su
(Dept. of Elelctrical Eng. Inha-Univ.) ;
- Chu, Eun-Sang (Dept. of Elelctrical Eng. Inha-Univ.)
- Published : 1995.07.20
Abstract
Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.
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