대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1994년도 하계학술대회 논문집 C
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- Pages.1448-1450
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- 1994
원통형 접합경계를 갖는 punchthrough 다이오드의 항복전압에 대한 해석적 계산
Analytical Calculation for the Breakdown Voltage of the Punchthrough Diode with Cylindrical Junction Edge
- Kim, Doo-Young (Dept of Electrical Eng., Seoul National Univ.) ;
- Kim, Han-Soo (Dept of Electrical Eng., Seoul National Univ.) ;
- Choi, Yearn-Ik (Dept. of Electronics Eng., Ajou Univ.) ;
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Han, Min-Koo
(Dept of Electrical Eng., Seoul National Univ.)
- 발행 : 1994.07.21
초록
The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.
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