Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1993.02a
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- Pages.29-31
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- 1993
NH$_3$ -pplasma Treatment of GaAs Surface at High Tempperature in RF pparallel pplate pplasma Reactor
- ppark, Kyoung-Wan (Basic Research Deppartment, ETRI) ;
- Lee, Seong-Jae- (Basic Research Deppartment ETRI) ;
- Kim, Gyungock- (Basic Research Deppartment ETRI) ;
- Lee, El-Hang- (Basic Research Deppartment ETRI)
- Published : 1993.02.01
Abstract
NH3-pplasma treatment has been used for ppassivation of native-oxide-contaminated GaAs surface. Ex-situ band-gapp pphotoluminescence(ppL) measurement shows enhanced intensity for the treated surfaces. Auger electron sppectroscoppy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to sppeculate that the graded GaN thin layer was formed on the surface. Based on these results, new metal-insulator-GaAs structure is ppropposed.
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