Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1992.07b
- /
- Pages.832-834
- /
- 1992
The Influence of the $SiH_4/NH_3$ Ratios on the Characteristics of Nonvolatile MNOS Memories during the PECVD Silicon Nitride Film deposition
PECVD 질화막 증착시 $SiH_4/NH_3$ 유량비가 비휘발성 MNOS 기억소자의 특성에 미치는 영향
- Yi, Sang-Bae (Dept. Electron. Materials Eng., Kwang woon Univ.) ;
- Lee, Keun-Hyuk (Dept. Electron. Materials Eng., Kwang woon Univ.) ;
- Lee, Hyung-Ok (Dept. Electron. Materials Eng., Kwang woon Univ.) ;
- Kim, Jin-Young (Dept. Electron. Materials Eng., Kwang woon Univ.) ;
- Seo, Kwang-Yell (Dept. Electron. Materials Eng., Kwang woon Univ.)
- 이상배 (광운대학교 전기재료공학과) ;
- 이근혁 (광운대학교 전기재료공학과) ;
- 이형옥 (광운대학교 전기재료공학과) ;
- 김진영 (광운대학교 전기재료공학과) ;
- 서광열 (광운대학교 전기재료공학과)
- Published : 1992.07.23
Abstract
Using the PECVD method, the silicon nitride films were deposited by changing the
Keywords