대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1991년도 하계학술대회 논문집
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- Pages.238-240
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- 1991
전도성 Langmuir-Blodgett 막 제작을 위한 성막물질의 합성과 막의 누적
Synthesis of Membrane Forming Material for the Fabrication of Conducting Langmuir-Blodgett Film and Layering the Film.
- 신동명 (홍익대학교 화학공학과) ;
- 손병청 (홍익대학교 화학공학과) ;
- 유덕선 (홍익대학교 과학기술연구소) ;
- 최강훈 (홍익대학교 전기제어공학과) ;
- 강도열 (홍익대학교 전기제어공학과)
- Shin, Dong-Myung (Chemical Eng. Hong-Ik Univ.) ;
- Sohn, Byung-Chung (Chemical Eng. Hong-Ik Univ.) ;
- You, Duck-Sun (Ins. of Sci. & Tech. Hong-Ik Univ.) ;
- Choi, Kang-Hoon (Electrical & Control Eng. Hong-Ik Univ.) ;
- Kang, Dou-Yol (Electrical & Control Eng. Hong-Ik Univ.)
- 발행 : 1991.07.18
초록
Langmuir-Blodgett(L.B) method is one of the most possible candidate for the fabrication of the micro scale memory or electrical devices. As for a fundamental study on the conduction mechanism in the organic thin membrane, N-alkyl quinolium-TCNQ complexes were synthesized and their physical properties were examined spectroscopically. LB film was produced by using Moving Wall Type LB Apparatus. The average area per molecule (N-docosylquinolium-TCNQ) was
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