The eletrical conduction and breakdown characteristics of thin films by Laser CVD

Laser CVD절연막의 전기전도와 절연파괴특성

  • Kang, H.B. (Dept. of Electrical Eng. Korea Univ.) ;
  • Kwon, B.J. (Dept. of Electrical Eng. Korea Univ.) ;
  • Kim, Y.W. (Dept. of Electrical Eng. Korea Univ.) ;
  • Kim, S.J. (Dept. of Electrical Eng. Korea Univ.) ;
  • Sung, Y.K. (Dept. of Electrical Eng. Korea Univ.)
  • 강희복 (고려대학교 전기공학과) ;
  • 권봉제 (고려대학교 전기공학과) ;
  • 김용우 (고려대학교 전기공학과) ;
  • 김성진 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1991.07.18

Abstract

In this paper, we introduce silicon dioxide films deposited by Laser CVD, and evaluate the breakdown characteristics of these films by TZDB(Time Zero Dieiectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test, failure times against eletric field are examined and accelation factors ${\beta}$ are obtained, and also, long term reliability is described by examining TDDB under positive voltage bias, all the above results are compared with PECVD(Plasma Enhanced CVD) $SiO_2$ breakdown, data, as a result, it is shown that the breakdown characteristics of Laser CVD $SiO_2$ films is improved.

Keywords