Numerical Analysis of Inverted Staggered-Type Hydrogenated Amorphous Silicon Thin Film Transistor

Inverted Staggered-Type 비정질 실리콘 박막트랜지스터의 수치적 분석

The characteristics of an inverted staggered-type hydrogenated amorphous silicon thin film transistor has been analyzed by employing numerical simulation. The field effect mobility and threshold voltage are characterized as a function of density of deep and tail states and lattice temperature. It has been found that the density of deep states plays an important role of determining the threshold voltage, while the field effect mobility are very sensitive to the slope of band tail states. Also, the numerically temperature dependence of field effect mobility and threshold voltage has been in good agreements with the experimental results.