대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1990년도 하계학술대회 논문집
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- Pages.261-264
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- 1990
열처리 조건에 따른 Al-Si 접촉
Al-Si Contact on Annealing condition
- Kim, Tae-Hyung (Dept. of Electrical Eng. Chung - Ang Univ.) ;
- Yu, Seok-Bin (Dept. of Electrical Eng. Chung - Ang Univ.) ;
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Kim, Chang-Il
(Dept. of Electrical Eng. Chung - Ang Univ.) ;
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Chang, Eui-Goo
(Dept. of Electrical Eng. Chung - Ang Univ.)
- 발행 : 1990.07.05
초록
The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.
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