실리콘의 L valley를 고려한 강한 전계에서 전자 수송의 특성

Electron Transport Characterization Including L Valley at High Field

Monte Carlo simulations of electron impact ionization in silicon utilizing simple spherical band approximation including L valley are presented. The mean energy of electron at high electric field is lowered and the threshold energy of electron impact ionizaiotn is smeared out to $E_x$ by including L valley. This work also presents the importance of the modeling of L valley by calculating the electron population rate of it over the threshold energy of eletron impact ionization, which is higher than 10%