대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1990년도 하계학술대회 논문집
- /
- Pages.257-260
- /
- 1990
실리콘의 L valley를 고려한 강한 전계에서 전자 수송의 특성
Electron Transport Characterization Including L Valley at High Field
- Rhee, Jun-Koo (Dept. of Electrical Eng., Seoul National Univ.) ;
- Park, Young-June (Dept. of Electronics Eng., Seoul National Univ.) ;
- Han, Min-Koo (Dept. of Electrical Eng., Seoul National Univ.)
- 발행 : 1990.07.05
초록
Monte Carlo simulations of electron impact ionization in silicon utilizing simple spherical band approximation including L valley are presented. The mean energy of electron at high electric field is lowered and the threshold energy of electron impact ionizaiotn is smeared out to
키워드