화합물 반도체 $ZnS/_{(P)}Si$ 태양전지에 관한 연구

A Study on the Compound Semiconductor $ZnS/_{(P)}Si$ Solar Cell

The lattice mismatch between ZnS and Si is negligible because of its value being 0.39%. In this study, $ZnS/_{(P)}Si$ solar cell were fabricated as a layer of ZnS is epitaxially grown on a silicon substrate by PVD method and its photovoltaic properties were measured and discussed. The heat treatment was done after deposition. As the temperature increased up to a certain value, the film has better perfection in crystal structure and electrical characteristics. Measurments of the change that occur in the ZnS films were made by SEM., X-ray diffraction. The optimal thickness of film showned $0.6{\mu}m$, being measured by SEM. The great improvement of the grain growth ZnS film came out after heat-treatment. The result obtained from the $ZnS/_{(P)}Si$ solar cell as follows:short circuit current; $I_{sc}=54mA/cm^2$,open voltage; $V_{oc}=400mV$, fill factor FF=0.72, conversion efficiency; ${\eta}=15.6%$ under the irradiation of 100 ($mW/cm^2$) focused by solar energy. And these are discussed in comparison with other kinds.