대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1990년도 하계학술대회 논문집
- /
- Pages.180-182
- /
- 1990
Laser assisted PECVD SiN막의 전기적 특성
Electrical characteristics of Laser assisted PECVD SiN film
- Kim, Yong-Woo (Dept. of Electrical Eng., Korea University) ;
- Kim, Chun-Sun (Dept. of Electrical Eng., Korea University) ;
- Rhi, Dong-Hee (Dept. of Electrical Eng., Korea University) ;
- Sung, Yung-Kwon (Dept. of Electrical Eng., Korea University)
- 발행 : 1990.07.05
초록
Today, according to the temperature lowering of VLSI technology which have been required, the new thin film technology of low temperature have appeared. Plasma CVD method, one of low temperature technologies, have major problems with many interface trap defects. In this paper, we prepared ammonia free SiN film containing small H that acts as a defect impurity, and investigated the electrical properties of Laser assisted deposition film.
키워드