A study on the plasma treatment effect of passivasion film and the photoconductance

passivasion 막의 Plasma 처리효과와 광전도

  • 이승환 (고려대학교 전기공학과) ;
  • 김재호 (고려대학교 전기공학과) ;
  • 홍형기 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1989.07.21

Abstract

Nitrided oxides have been recently investigated for the application as a replacement of thermally grown $SiO_2$in the MIS devices. In this paper, thin oxides were nitrided in the $N_2$plasma ambient. After B - T stress is performed on the sample, it was noticed that the current density is increased. From the I - V measurement, dominant conduction mechanism of oxynitride films appeared to be Fowler - Nordheim emission. And also its breakdown strength is increased about 2.2 MV/cm compared with the oxide films.

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