대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1988년도 추계학술대회 논문집 학회본부
- /
- Pages.363-367
- /
- 1988
LDD MOSFET 채널 전계의 특성해석
Characterization of Channel Electric Field in LDD MOSFET
- Park, Min-Hyoung (Department of Electrical Engineering, Seoul National University) ;
- Han, Min-Koo (Department of Electrical Engineering, Seoul National University)
- 발행 : 1988.11.25
초록
A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.
키워드