Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1988.11a
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- Pages.147-150
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- 1988
Time-Dependent Dielectric Breakdown Characteristics of Thin $SiO_2$ Films and Their Correlation to Defects in the Oxide
얇은 산화막의 TDDB 특성과 막내의 결함과의 상관성
- Sung, Yung-Kwon (Dept. of Electrical Eng. Korea University) ;
- Choi, Jong-Ill (Dept. of Electrical Eng. Korea University) ;
- Kim, Sang-Yung (Dept. of Electrical Eng. Korea University) ;
- Han, Sung-Jin (Dept. of Electrical Eng. Korea University)
- Published : 1988.11.25
Abstract
Since the integration level of VLSI circuits progresses very quickly, a highly reliable thin
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