Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1988.07a
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- Pages.788-791
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- 1988
C-T Characteristics of Nitridized MOS Capacitor
질화된 MOS 커패시터의 C-T 특성
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Chang, Eui-Goo
(Department of Electrical Engineering, Chung-Ang University)
;
- Choi, Won-Eun (Department of Electrical Engineering, Chung-Ang University) ;
- Seo, Yong-Jin (Department of Electrical Engineering, Chung-Ang University) ;
- Choi, Hyun-Sik (Department of Electrical Engineering, Chung-Ang University) ;
- Yu, Seok-Bin (Department of Electrical Engineering, Chung-Ang University)
- Published : 1988.07.01
Abstract
The C-T characteristics of nitridized MOS capacitor have been studied. The generation lifetimes were calculated using C-T transient response ans found to vary as sample condition. This is due to the non-uniformity of fast surface state. Also, This experimental curves were different from theoretical curves. The result suggests that the change in material structure (from SiO2 to Si-N-O) is important in improving minority carrier lifetime.
Keywords