대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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- Pages.375-378
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- 1988
슬립현상을 최소화 하기위한 급속열처리
Rapid thermal annealing to minimize Slip
- Kwon, Kyung-Sup (Dept. of Electronics Engr., Chungang University) ;
- Lee, Byum-Hak (Dept. of Electronics Engr., Chungang University) ;
- Hwang, Ho-Jung (Dept. of Electronics Engr., Chungang University)
- 발행 : 1988.07.01
초록
In this paper a newly designed rapid thermal process (RTP) structure is proposed to the slip induced in silicon wafers considerably. The reflectors and a graphite radiation were used to compensate the temperature difference causing slip in silicon wafers. From our experiments it is known that slip can be removed during a rapid thermal annealing at high temperature.
키워드