BEM을 이용하여 열산화를 고려한 실리콘 내에서 불순물의 2차원 재분포에 관한 연구

Two-dimensional Redistribution of Impurity considering Thermal Oxidation in silicon using BEM

This paper is concerned with the investigation of the impurity redistribution process in a two step diffusion. In integrated circuit technology, two step boron diffusion involving a deposition step followed by a drive-in step in commonly encounted. The drive-in process is usually performed in oxidizing atmosphere resulting in redistribution of impurity (boron) within the semiconductor. This paper proposes a new numerical analysis method; Bounary Element Method to determine impurity profile at the arbitrary point in domain by its coordinate and boundary value.