방사가열원이 Si의 흡수효과와 OSF 성장에 미치는 영향

Influence of Radiation Heating Sources on the Absorption Effect and Growth of OSF in Si

  • 홍순관 (서울시립대학교 전자공학과) ;
  • 김철주 (서울시립대학교 전자공학과) ;
  • 이철승 (경희대학교 전자공학과) ;
  • 정관수 (경희대학교 전자공학과)
  • 발행 : 1988.07.01

초록

Influence of incoherent lamp heating sources on the absorption effect and variation of OSF' size were investigated. The absorption effect on I.R lamp caused by free carrier excitation is greater than that of Tungsten-Halogen lamp. The variation of DSF' size weakly affected by oxidation time.

키워드